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| LED - Chip Preliminary Radiation Red Type Point Source 10.04.2007 Technology AlInGaP/GaAs ELC-645-29-20 rev. 04/07 Electrodes N (cathode) up typ. dimensions (m) 310 O 50 +4 typ. thickness 170 (20) m 260 -10 +20 cathode gold alloy, 1.5 m anode gold alloy, 0.5 m 130 R 10 5 130 360 -10 +20 P S-04 Maximum Ratings Tamb = 25C, unless otherwise specified Test Parameter conditions Forward current (DC) Symbol Min Typ Max Unit 210 IF 10 mA Optical and Electrical Characteristics Tamb = 25C, unless otherwise specified Test Parameter conditions Forward voltage Reverse voltage Radiant power* Luminous intensity* Peak wavelength Spectral bandwidth at 50% Switching time IF = 5 mA IR = 10 A IF = 5 mA IF = 5 mA IF = 5 mA IF = 5 mA IF = 5 mA Symbol Min Typ Max Unit VF VR e IV P 0.5 tr, tf 5 40 1.7 635 2.0 2.5 V V 55 2.5 645 25 40/30 660 W mcd nm nm ns *Measured on bare chip on TO-18 header with EPIGAP equipment Labeling Type ELC-645-29-20 Lot N e(typ) [mW] VF(typ) [V] Quantity Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1 |
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